STV250N55F3
N-channel 55 V, 1.5 m, 250 A, PowerSO-10 STripFETTM Power MOSFET
Features
Type STV250N55F3
VDSS 55 V
RDS(on) max < 2.2 m
ID 250 A
10
Conduction losses reduced Low profile, very low parasitic inductance
1
PowerSO-10
Application
Switching applications Figure 1. Internal schematic diagram and connection diagram (top view)
Description
This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique "single feature size" strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge.
Table 1.
Device summary
Order code Marking 250N55F3 Package PowerSO-10 Packaging Tape and reel
STV250N55F3
November 2008
Rev 3
1/12
www.st.com 12
Contents
STV250N55F3
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . ..... 6
3 4 5
Test circuits
. . .. . .. . .. . .. . .. . .. . .. . .. . .. 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STV250N55F3
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VDS VGS ID ID IDM (1) PTOT (2)
Absolute maximum ratings
Parameter Drain-source voltage (vgs = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor Value 55 20 250 175 1000 300 2.0 1 -55 to 175 Operating junction temperature Unit V V A A A W W/C J C
EAS (3) Tstg Tj
Single pulse avalanche energy Storage temperature
1. Pulse width limited by safe operating area 2. This value is rated according to Rthj-c 3. Starting Tj = 25 C, ID = 60 A, VDD = 35 V
Table 3.
Symbol Rthj-case Rthj-pcb(1)
Thermal data
Parameter Thermal resistance junction-case Max Thermal resistance junction-pcb Max Value 0.5 50 Unit C/W C/W
1. When mounted on 1 inch2 FR-4 2 oz Cu
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Electrical characteristics
STV250N55F3
2
Electrical characteristics
(Tcase = 25 C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On /off states
Parameter Drain-source breakdown voltage Test conditions ID = 250 A, VGS = 0 Min. 55 1 10 100 2 1.5 4 2.2 Typ. Max. Unit V A A nA V m
VDS = Max rating, Zero gate voltage drain current (VGS = 0) VDS = Max rating, Tc = 125 C Gate body leakage current (VDS = 0) VDS = 20 V
Gate threshold voltage VDS = VGS, ID = 250 A Static drain-source on resistance VGS = 10 V, ID = 75 A
Table 5.
Symbol Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. 6800 1450 15 100 30 26 Max. Unit pF pF pF nC nC nC
VDS = 25 V, f = 1 MHz, VGS = 0
VDD = 44 V, ID = 120 A, VGS = 10 V (see Figure 14)
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STV250N55F3
Electrical characteristics
Table 6.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Test conditions VDD = 27.5 V, ID = 60 A RG = 4.7 , VGS = 10 V, (see Figure 13) VDD = 27.5 V, ID = 60 A RG = 4.7 , VGS = 10 V, (see Figure 13) Min. Typ. 25 150 Max Unit ns ns
Turn-off delay time Fall time
110 50
ns ns
Table 7.
Symbol ISD ISD
(1)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 120 A, VGS = 0 ISD = 120 A, di/dt = 100 A/s VDD = 35 V, Tj = 150 C (see Figure 18) 60 110 3.5 Test conditions Min. Typ. Max. Unit 250 1000 1.5 A A V ns nC A
VSD (2) t rr Qrr IRRM
1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5%
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Electrical characteristics
STV250N55F3
2.1
Figure 2.
ID (A)
Electrical characteristics (curves)
Safe operating area
AM03164v1
a (on S is th RD in ax on y m ti ra d b pe O mite i L a re is
)
Figure 3.
Thermal impedance
280tok
K =0.5 100s 1ms 10ms 0.2 0.1 10
-1
100
0.05 0.02
10
1
Tj=175C Tc=25C Sinlge pulse
0.01 Single pulse 1 10 VDS(V) 10 -5 10
-2
Zth=k Rthj-c =tp/
tp
-4 -3 -2 -1
0.1 0.1
10
10
10
10
tp (s)
Figure 4.
ID (A) 400 350 300 250 200 150 100
Output characteristics
AM03165v1
Figure 5.
ID (A) 400
Transfer characteristics
AM03166v1
VGS=10V
VDS=5V
7V
6V
350 300 250 200 150
5V 50 0 0
100 50 0
2
4
6
VDS(V)
0
1
2
3
4
5
6
7
8
9 VGS(V)
Figure 6.
Normalized BVDSS vs temperature
Figure 7.
RDS(on) () 3.0 2.5 2.0 1.5 1.0 0.5 0
Static drain-source on resistance
AM03167v1
VGS=10V
100
200
300
400 ID(A)
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STV250N55F3 Figure 8. Gate charge vs gate-source voltage Figure 9.
Electrical characteristics Capacitance variations
Figure 10. Normalized gate threshold voltage vs temperature
Figure 11. Normalized on resistance vs temperature
Figure 12. Source-drain diode forward characteristics
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Test circuits
STV250N55F3
3
Test circuits
Figure 14. Gate charge test circuit
Figure 13. Switching times test circuit for resistive load
Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
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STV250N55F3
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STV250N55F3
PowerSO-10 mechanical data
mm Di m Min A A1 A2 A3 b c D D1 E E1 E2 E3 e L < 0.00 3.40 1.25 0.40 0.35 9.40 7.40 13.80 9.30 7.20 5.90 1.27 0.95 0o 1.65 8o Typ M ax 3.70 0.10 3.60 1.35 0.53 0.55 9.60 7.60 14.40 9.50 7.60 6.10
0068039_E
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STV250N55F3
Revision history
5
Revision history
Table 8.
Date 25-Oct-2007 20-Mar-2008 10-Nov-2008
Document revision history
Revision 1 2 3 Initial release Content reworked to improve readability, no technical changes. Document status promoted from preliminary data to datasheet. Changes
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STV250N55F3
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